MOSFET N/P-CH 30V 3.7/2.9A 8SOIC NDS9952A
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Description:
MOSFET N/P-CH 30V 3.7/2.9A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
8-SOIC(0.154,3.90mm wide)
DataSheet
NDS9952A（FET, MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory12985,Price reference "real-time change" China/Hongkong。 NDS9952A package/specs, Download NDS9952A、Datasheet。
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